onsemi N-Channel MOSFET, 4 A, 60 V, 3-Pin SOT-223 NDT3055L

RS kataloški broj:: 671-1090robna marka: onsemiProizvođački broj:: NDT3055L
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.56mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

13 nC @ 10 V

Minimum Operating Temperature

-65 °C

Height

1.6mm

Detalji o proizvodu

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 6,90

€ 1,38 Each (In a Pack of 5) (bez PDV-a)

€ 8,07

€ 1,615 Each (In a Pack of 5) (s PDV-om)

onsemi N-Channel MOSFET, 4 A, 60 V, 3-Pin SOT-223 NDT3055L
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

5

Dostupno u više komada 5
5€ 6,90
10€ 13,80
15€ 20,70
20€ 27,60
25€ 34,50
30€ 41,40
35€ 48,30
40€ 55,20
45€ 62,10
50€ 60,50
55€ 66,55
60€ 72,60
65€ 78,65
70€ 84,70
75€ 90,75

€ 6,90

€ 1,38 Each (In a Pack of 5) (bez PDV-a)

€ 8,07

€ 1,615 Each (In a Pack of 5) (s PDV-om)

onsemi N-Channel MOSFET, 4 A, 60 V, 3-Pin SOT-223 NDT3055L
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

5

Dostupno u više komada 5
5€ 6,90
10€ 13,80
15€ 20,70
20€ 27,60
25€ 34,50
30€ 41,40
35€ 48,30
40€ 55,20
45€ 62,10
50€ 60,50
55€ 66,55
60€ 72,60
65€ 78,65
70€ 84,70
75€ 90,75

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

količinaJedinična cijenaPo pakovanje
5 - 45€ 1,38€ 6,90
50 - 95€ 1,21€ 6,05
100 - 495€ 1,09€ 5,45
500 - 995€ 1,00€ 5,00
1000+€ 0,94€ 4,70

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.56mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

13 nC @ 10 V

Minimum Operating Temperature

-65 °C

Height

1.6mm

Detalji o proizvodu

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više