STMicroelectronics MJE3055T NPN Transistor, 10 A, 60 V, 3-Pin TO-220

Name: STMicroelectronics MJE3055T NPN Transistor, 10 A, 60 V, 3-Pin TO-220
Brand: STMicroelectronics
SKU: 1686073
Availability: LimitedAvailability

RS kataloški broj:: 168-6073brend: STMicroelectronicsProizvođački broj:: MJE3055T

Prikaži sve u Bipolar Transistors

Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Transistor Type

NPN

Maximum DC Collector Current

10 A

Maximum Collector Emitter Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

75 W

Minimum DC Current Gain

Transistor Configuration

Single

Maximum Collector Base Voltage

70 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

2 MHz

Pin Count

Number of Elements per Chip

Dimensions

9.15 x 10.4 x 4.6mm

Maximum Operating Temperature

+150 °C

Detalji o proizvodu

NPN Power Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Informacije o stanju skladišta trenutno nisu dostupne.

RSD 7.054

RSD 141,086 komad (u Tubi od 50) (bez PDV-a)

RSD 8.465

RSD 169,303 komad (u Tubi od 50) (s PDV-om)

STMicroelectronics MJE3055T NPN Transistor, 10 A, 60 V, 3-Pin TO-220

RSD 7.054

RSD 141,086 komad (u Tubi od 50) (bez PDV-a)

RSD 8.465

RSD 169,303 komad (u Tubi od 50) (s PDV-om)

STMicroelectronics MJE3055T NPN Transistor, 10 A, 60 V, 3-Pin TO-220

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količina	Jedinična cena	Po cev
50 - 50	RSD 141,086	RSD 7.054
100 - 450	RSD 99,283	RSD 4.964
500 - 950	RSD 90,138	RSD 4.507
1000 - 1950	RSD 79,687	RSD 3.984
2000+	RSD 78,381	RSD 3.919

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Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Transistor Type

NPN

Maximum DC Collector Current

10 A

Maximum Collector Emitter Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

75 W

Minimum DC Current Gain

Transistor Configuration

Single

Maximum Collector Base Voltage

70 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

2 MHz

Pin Count

Number of Elements per Chip

Dimensions

9.15 x 10.4 x 4.6mm

Maximum Operating Temperature

+150 °C

Detalji o proizvodu

NPN Power Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.