Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
400 V
Series
MDmesh, SuperMESH
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.4mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
RSD 277.599
RSD 111,04 komad (u Reel od 2500) (bez PDV-a)
RSD 333.119
RSD 133,248 komad (u Reel od 2500) (s PDV-om)
2500
RSD 277.599
RSD 111,04 komad (u Reel od 2500) (bez PDV-a)
RSD 333.119
RSD 133,248 komad (u Reel od 2500) (s PDV-om)
2500
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po kolut |
---|---|---|
2500 - 2500 | RSD 111,04 | RSD 277.599 |
5000+ | RSD 101,895 | RSD 254.738 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
400 V
Series
MDmesh, SuperMESH
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.4mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu