Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Detalji o proizvodu
MOSFET Transistors, Toshiba
KM 14,96
KM 2,992 Each (In a Pack of 5) (bez PDV-a)
KM 17,50
KM 3,501 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 14,96
KM 2,992 Each (In a Pack of 5) (bez PDV-a)
KM 17,50
KM 3,501 Each (In a Pack of 5) (s PDV-om)
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
5 - 45 | KM 2,992 | KM 14,96 |
50 - 120 | KM 2,758 | KM 13,79 |
125 - 245 | KM 2,719 | KM 13,59 |
250 - 495 | KM 2,601 | KM 13,01 |
500+ | KM 2,484 | KM 12,42 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Detalji o proizvodu