Vishay N-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB IRF530PBF

Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
26 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
KM 19,07
KM 3,814 Each (In a Pack of 5) (bez PDV-a)
KM 22,31
KM 4,462 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 19,07
KM 3,814 Each (In a Pack of 5) (bez PDV-a)
KM 22,31
KM 4,462 Each (In a Pack of 5) (s PDV-om)
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
5 - 45 | KM 3,814 | KM 19,07 |
50 - 120 | KM 3,286 | KM 16,43 |
125 - 245 | KM 3,208 | KM 16,04 |
250 - 495 | KM 3,149 | KM 15,74 |
500+ | KM 3,051 | KM 15,26 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
26 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu