Wolfspeed Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge CAS120M12BM2
Tehnička dokumentacija
Tehnički podaci
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
193 A
Maximum Drain Source Voltage
1200 V
Package Type
Half Bridge
Mounting Type
Screw Mount
Pin Count
7
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
925 W
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Number of Elements per Chip
2
Width
61.4mm
Length
106.4mm
Typical Gate Charge @ Vgs
378 nC @ 20 V
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
2.4V
Height
30mm
Zemlja podrijetla
China
Detalji o proizvodu
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
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Cena na upit
komad (u kutiji od 10) (bez PDV-a)
10
Cena na upit
komad (u kutiji od 10) (bez PDV-a)
10
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Proverite ponovno kasnije.
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- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
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- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
193 A
Maximum Drain Source Voltage
1200 V
Package Type
Half Bridge
Mounting Type
Screw Mount
Pin Count
7
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
925 W
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Number of Elements per Chip
2
Width
61.4mm
Length
106.4mm
Typical Gate Charge @ Vgs
378 nC @ 20 V
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
2.4V
Height
30mm
Zemlja podrijetla
China
Detalji o proizvodu
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda