Infineon HEXFET P-Channel MOSFET, 23 A, 100 V, 3-Pin TO-220AB IRF9540NPBF
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
117 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
97 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Height
8.77mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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RSD 9.210
RSD 184,195 komad (u Tubi od 50) (bez PDV-a)
RSD 11.052
RSD 221,034 komad (u Tubi od 50) (s PDV-om)
50
RSD 9.210
RSD 184,195 komad (u Tubi od 50) (bez PDV-a)
RSD 11.052
RSD 221,034 komad (u Tubi od 50) (s PDV-om)
50
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
| količina | Jedinična cena | Po cev |
|---|---|---|
| 50 - 50 | RSD 184,195 | RSD 9.210 |
| 100 - 200 | RSD 138,473 | RSD 6.924 |
| 250 - 450 | RSD 137,167 | RSD 6.858 |
| 500 - 950 | RSD 131,941 | RSD 6.597 |
| 1000+ | RSD 126,716 | RSD 6.336 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
117 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
97 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Height
8.77mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda