Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
80 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.65mm
Length
10.51mm
Typical Gate Charge @ Vgs
151.2 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
9.01mm
Zemlja podrijetla
China
RSD 25.147
RSD 502,944 komad (isporucivo u Tubi) (bez PDV-a)
RSD 30.177
RSD 603,533 komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
50
RSD 25.147
RSD 502,944 komad (isporucivo u Tubi) (bez PDV-a)
RSD 30.177
RSD 603,533 komad (isporucivo u Tubi) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (cev)
50
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cena | Po cev |
---|---|---|
50 - 120 | RSD 502,944 | RSD 2.515 |
125 - 245 | RSD 496,413 | RSD 2.482 |
250 - 495 | RSD 483,349 | RSD 2.417 |
500+ | RSD 470,286 | RSD 2.351 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
80 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.65mm
Length
10.51mm
Typical Gate Charge @ Vgs
151.2 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
9.01mm
Zemlja podrijetla
China