Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
20 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
56 nC @ 10 V
Length
2.05mm
Series
DMN2011UFDF
Minimum Operating Temperature
-55 °C
Height
0.58mm
Forward Diode Voltage
1.2V
Detalji o proizvodu
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 1,233
Each (In a Pack of 20) (bez PDV-a)
KM 1,443
Each (In a Pack of 20) (s PDV-om)
20
KM 1,233
Each (In a Pack of 20) (bez PDV-a)
KM 1,443
Each (In a Pack of 20) (s PDV-om)
20
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
20 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
56 nC @ 10 V
Length
2.05mm
Series
DMN2011UFDF
Minimum Operating Temperature
-55 °C
Height
0.58mm
Forward Diode Voltage
1.2V
Detalji o proizvodu