Fairchild ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole
Tehnička dokumentacija
Tehnički podaci
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 4.7 x 16.3mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 47,26
KM 9,452 Each (In a Pack of 5) (bez PDV-a)
KM 55,29
KM 11,059 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 47,26
KM 9,452 Each (In a Pack of 5) (bez PDV-a)
KM 55,29
KM 11,059 Each (In a Pack of 5) (s PDV-om)
Standard
5
Kupujte na veliko
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 5 - 5 | KM 9,452 | KM 47,26 |
| 10 - 95 | KM 7,722 | KM 38,61 |
| 100 - 495 | KM 6,618 | KM 33,09 |
| 500 - 995 | KM 5,797 | KM 28,98 |
| 1000+ | KM 5,299 | KM 26,50 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 4.7 x 16.3mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda