Tehnička dokumentacija
Tehnički podaci
Brand
InfineonOutput Current
2.3 A
Supply Voltage
17.5V
Pin Count
14
Package Type
DSO
Fall Time
60ns
Number of Outputs
2
Rise Time
80ns
Topology
Galvanic Isolated
High and Low Sides Dependency
Independent
Number of Drivers
2
Bridge Type
Half Bridge
Polarity
Non-Inverting
Mounting Type
Surface Mount
Zemlja podrijetla
China
Detalji o proizvodu
EiceDRIVER Half Bridge Isolated Gate Drive IC, Infineon
The EiceDRIVER 2EDL is a compact 600V Half Bridge driver family that delivers current to enable and disable the power device as well as offering isolation. The EDL enhanced series features over voltage protection, active shutdown and can be used in consumer and home appliances. The Infineon EiceDRIVER 2EDL range is based on level shifter silicon on Insulator technology (SOI) which controls MOS-transistors and incorporates bootstrap diode.
MOSFET & IGBT Drivers, Infineon (International Rectifier)
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 232,53
komad (u Reel od 2500) (bez PDV-a)
RSD 279,036
komad (u Reel od 2500) (s PDV-om)
2500
RSD 232,53
komad (u Reel od 2500) (bez PDV-a)
RSD 279,036
komad (u Reel od 2500) (s PDV-om)
2500
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonOutput Current
2.3 A
Supply Voltage
17.5V
Pin Count
14
Package Type
DSO
Fall Time
60ns
Number of Outputs
2
Rise Time
80ns
Topology
Galvanic Isolated
High and Low Sides Dependency
Independent
Number of Drivers
2
Bridge Type
Half Bridge
Polarity
Non-Inverting
Mounting Type
Surface Mount
Zemlja podrijetla
China
Detalji o proizvodu
EiceDRIVER Half Bridge Isolated Gate Drive IC, Infineon
The EiceDRIVER 2EDL is a compact 600V Half Bridge driver family that delivers current to enable and disable the power device as well as offering isolation. The EDL enhanced series features over voltage protection, active shutdown and can be used in consumer and home appliances. The Infineon EiceDRIVER 2EDL range is based on level shifter silicon on Insulator technology (SOI) which controls MOS-transistors and incorporates bootstrap diode.