Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.011 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 8,176
Each (In a Pack of 5) (bez PDV-a)
KM 9,566
Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 8,176
Each (In a Pack of 5) (bez PDV-a)
KM 9,566
Each (In a Pack of 5) (s PDV-om)
Standard
5
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
5 - 20 | KM 8,176 | KM 40,88 |
25 - 45 | KM 7,873 | KM 39,36 |
50 - 120 | KM 7,375 | KM 36,88 |
125 - 245 | KM 6,921 | KM 34,61 |
250+ | KM 6,835 | KM 34,17 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.011 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si