Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Series
OptiMOS™
Package Type
TSDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
900 μΩ
Channel Mode
Enhancement
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.1mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Detalji o proizvodu
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 2,595
Each (On a Reel of 5000) (bez PDV-a)
KM 3,036
Each (On a Reel of 5000) (s PDV-om)
5000
KM 2,595
Each (On a Reel of 5000) (bez PDV-a)
KM 3,036
Each (On a Reel of 5000) (s PDV-om)
5000
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Series
OptiMOS™
Package Type
TSDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
900 μΩ
Channel Mode
Enhancement
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.1mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Detalji o proizvodu
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.