Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS™-T
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Width
10.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 17,087
Each (Supplied on a Reel) (bez PDV-a)
KM 19,992
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
10
KM 17,087
Each (Supplied on a Reel) (bez PDV-a)
KM 19,992
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
10
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
10 - 20 | KM 17,087 | KM 85,43 |
25 - 45 | KM 16,762 | KM 83,81 |
50 - 120 | KM 16,222 | KM 81,11 |
125+ | KM 15,681 | KM 78,41 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS™-T
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Width
10.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm