Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Width
9.65mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Series
IRF3710ZS
Minimum Operating Temperature
-55 °C
Height
4.83mm
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 2,704
Each (On a Reel of 800) (bez PDV-a)
KM 3,164
Each (On a Reel of 800) (s PDV-om)
800
KM 2,704
Each (On a Reel of 800) (bez PDV-a)
KM 3,164
Each (On a Reel of 800) (s PDV-om)
800
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
800 - 800 | KM 2,704 | KM 2.162,90 |
1600+ | KM 2,595 | KM 2.076,38 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Width
9.65mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Series
IRF3710ZS
Minimum Operating Temperature
-55 °C
Height
4.83mm