Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS C3
Package Type
TO-247
Series
CoolMOS™ C3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
415 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.9mm
Typical Gate Charge @ Vgs
252 nC @ 10 V
Width
5.3mm
Minimum Operating Temperature
-55 °C
Height
20.95mm
Zemlja podrijetla
Philippines
Detalji o proizvodu
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 37,851
Each (In a Tube of 30) (bez PDV-a)
KM 44,286
Each (In a Tube of 30) (s PDV-om)
30
KM 37,851
Each (In a Tube of 30) (bez PDV-a)
KM 44,286
Each (In a Tube of 30) (s PDV-om)
30
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
30 - 30 | KM 37,851 | KM 1.135,52 |
60 - 60 | KM 36,769 | KM 1.103,08 |
90+ | KM 35,688 | KM 1.070,64 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS C3
Package Type
TO-247
Series
CoolMOS™ C3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
415 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.9mm
Typical Gate Charge @ Vgs
252 nC @ 10 V
Width
5.3mm
Minimum Operating Temperature
-55 °C
Height
20.95mm
Zemlja podrijetla
Philippines
Detalji o proizvodu
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.