Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.48V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 16,983
komad (u Reel od 3000) (bez PDV-a)
RSD 20,38
komad (u Reel od 3000) (s PDV-om)
3000
RSD 16,983
komad (u Reel od 3000) (bez PDV-a)
RSD 20,38
komad (u Reel od 3000) (s PDV-om)
3000
Kupujte na veliko
količina | Jedinična cena | Po kolut |
---|---|---|
3000 - 3000 | RSD 16,983 | RSD 50.948 |
6000 - 12000 | RSD 15,676 | RSD 47.029 |
15000+ | RSD 13,063 | RSD 39.190 |
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.48V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu