Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
154 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Width
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
16.3mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 7,246
Each (In a Tube of 50) (bez PDV-a)
KM 8,478
Each (In a Tube of 50) (s PDV-om)
50
KM 7,246
Each (In a Tube of 50) (bez PDV-a)
KM 8,478
Each (In a Tube of 50) (s PDV-om)
50
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
154 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Width
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
16.3mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China