Tehnička dokumentacija
Tehnički podaci
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+150 °C
Maximum Collector Emitter Saturation Voltage
3 V
Detalji o proizvodu
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 267,802
komad (u Tubi od 30) (bez PDV-a)
RSD 321,362
komad (u Tubi od 30) (s PDV-om)
30
RSD 267,802
komad (u Tubi od 30) (bez PDV-a)
RSD 321,362
komad (u Tubi od 30) (s PDV-om)
30
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+150 °C
Maximum Collector Emitter Saturation Voltage
3 V
Detalji o proizvodu
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.