Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.6 nC @ 4 V
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 67,93
komad (isporučivo u Reel) (bez PDV-a)
RSD 81,516
komad (isporučivo u Reel) (s PDV-om)
20
RSD 67,93
komad (isporučivo u Reel) (bez PDV-a)
RSD 81,516
komad (isporučivo u Reel) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cena | Po kolut |
---|---|---|
20 - 80 | RSD 67,93 | RSD 1.359 |
100 - 180 | RSD 35,271 | RSD 705 |
200 - 980 | RSD 31,352 | RSD 627 |
1000 - 1980 | RSD 28,74 | RSD 575 |
2000+ | RSD 27,433 | RSD 549 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.6 nC @ 4 V
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Zemlja podrijetla
China
Detalji o proizvodu