Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,757
Each (In a Pack of 25) (bez PDV-a)
KM 0,886
Each (In a Pack of 25) (s PDV-om)
Standard
25
KM 0,757
Each (In a Pack of 25) (bez PDV-a)
KM 0,886
Each (In a Pack of 25) (s PDV-om)
Standard
25
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
25 - 75 | KM 0,757 | KM 18,93 |
100 - 225 | KM 0,649 | KM 16,22 |
250 - 475 | KM 0,606 | KM 15,14 |
500 - 975 | KM 0,541 | KM 13,52 |
1000+ | KM 0,519 | KM 12,98 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.