Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
5pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Detalji o proizvodu
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,757
Each (Supplied on a Reel) (bez PDV-a)
KM 0,886
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
10
KM 0,757
Each (Supplied on a Reel) (bez PDV-a)
KM 0,886
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
10
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
10 - 90 | KM 0,757 | KM 7,57 |
100+ | KM 0,324 | KM 3,24 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
5pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Detalji o proizvodu
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.