Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
123 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
Malaysia
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 5,515
Each (On a Reel of 1500) (bez PDV-a)
KM 6,453
Each (On a Reel of 1500) (s PDV-om)
1500
KM 5,515
Each (On a Reel of 1500) (bez PDV-a)
KM 6,453
Each (On a Reel of 1500) (s PDV-om)
1500
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
123 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
Malaysia