Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,238
Each (On a Reel of 3000) (bez PDV-a)
KM 0,278
Each (On a Reel of 3000) (s PDV-om)
3000
KM 0,238
Each (On a Reel of 3000) (bez PDV-a)
KM 0,278
Each (On a Reel of 3000) (s PDV-om)
3000
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu