Tehnička dokumentacija
Tehnički podaci
Brand
onsemiMaximum Continuous Collector Current
35 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20.0V
Number of Transistors
6
Package Type
DIP26
Configuration
3 Phase
Mounting Type
Through Hole
Channel Type
N
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Proverite ponovno kasnije.
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RSD 18.951
RSD 18.951 Each (bez PDV-a)
RSD 22.741
RSD 22.741 Each (s PDV-om)
onsemi NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole
1
RSD 18.951
RSD 18.951 Each (bez PDV-a)
RSD 22.741
RSD 22.741 Each (s PDV-om)
onsemi NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole
Informacije o stanju skladišta trenutno nisu dostupne.
1
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiMaximum Continuous Collector Current
35 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20.0V
Number of Transistors
6
Package Type
DIP26
Configuration
3 Phase
Mounting Type
Through Hole
Channel Type
N