Tehnička dokumentacija
Tehnički podaci
Brand
PanasonicChannel Type
N, P
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Package Type
SSMini6 F3 B
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
6 Ω, 17 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
125 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.2mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.6mm
Height
0.5mm
Series
FG
Zemlja podrijetla
China
Detalji o proizvodu
N/P-Channel Dual MOSFET, Panasonic
MOSFET Transistors, Panasonic
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
P.O.A.
8000
P.O.A.
8000
Tehnička dokumentacija
Tehnički podaci
Brand
PanasonicChannel Type
N, P
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Package Type
SSMini6 F3 B
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
6 Ω, 17 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
125 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.2mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.6mm
Height
0.5mm
Series
FG
Zemlja podrijetla
China
Detalji o proizvodu