Tehnička dokumentacija
Tehnički podaci
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Pin Count
4
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Screw Mount
Maximum Operating Temperature
+200 °C
Maximum Drain Source Voltage
70 V
Maximum Gate Threshold Voltage
7V
Series
TetraFET
Maximum Continuous Drain Current
5 A
Maximum Power Dissipation
50 W
Height
6.6mm
Width
9.52mm
Length
24.76mm
Maximum Drain Source Resistance
1 Ω
Package Type
DA
Brand
SemelabZemlja podrijetla
United Kingdom
Detalji o proizvodu
Fully Moulded Subminiature GB Series
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 163,299
komadno (isporučuje se u traci) (bez PDV-a)
KM 191,06
komadno (isporučuje se u traci) (s PDV-om)
25
KM 163,299
komadno (isporučuje se u traci) (bez PDV-a)
KM 191,06
komadno (isporučuje se u traci) (s PDV-om)
25
Tehnička dokumentacija
Tehnički podaci
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Pin Count
4
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Screw Mount
Maximum Operating Temperature
+200 °C
Maximum Drain Source Voltage
70 V
Maximum Gate Threshold Voltage
7V
Series
TetraFET
Maximum Continuous Drain Current
5 A
Maximum Power Dissipation
50 W
Height
6.6mm
Width
9.52mm
Length
24.76mm
Maximum Drain Source Resistance
1 Ω
Package Type
DA
Brand
SemelabZemlja podrijetla
United Kingdom
Detalji o proizvodu