N-Channel MOSFET, 80 A, 40 V, 3-Pin DPAK STMicroelectronics STD80N4F6

RS kataloški broj:: 165-6582robna marka: STMicroelectronicsProizvođački broj:: STD80N4F6
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Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

DeepGate, STripFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Width

6.2mm

Number of Elements per Chip

1

Height

2.4mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

China

Detalji o proizvodu

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Informacije o stanju skladišta trenutno nisu dostupne.

KM 3,05

Each (On a Reel of 2500) (bez PDV-a)

KM 3,568

Each (On a Reel of 2500) (s PDV-om)

N-Channel MOSFET, 80 A, 40 V, 3-Pin DPAK STMicroelectronics STD80N4F6

2500

Dostupno u više komada 2500
2500KM 7.624,22
5000KM 15.248,44
7500KM 22.872,67
10000KM 30.496,89
12500KM 38.121,11
15000KM 45.745,34
17500KM 53.369,56
20000KM 60.993,78
22500KM 68.618,00
25000KM 76.242,22
27500KM 83.866,45
30000KM 91.490,67
32500KM 99.114,89
35000KM 106.739,12
37500KM 114.363,34

KM 3,05

Each (On a Reel of 2500) (bez PDV-a)

KM 3,568

Each (On a Reel of 2500) (s PDV-om)

N-Channel MOSFET, 80 A, 40 V, 3-Pin DPAK STMicroelectronics STD80N4F6
Informacije o stanju skladišta trenutno nisu dostupne.

2500

Dostupno u više komada 2500
2500KM 7.624,22
5000KM 15.248,44
7500KM 22.872,67
10000KM 30.496,89
12500KM 38.121,11
15000KM 45.745,34
17500KM 53.369,56
20000KM 60.993,78
22500KM 68.618,00
25000KM 76.242,22
27500KM 83.866,45
30000KM 91.490,67
32500KM 99.114,89
35000KM 106.739,12
37500KM 114.363,34

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

DeepGate, STripFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Width

6.2mm

Number of Elements per Chip

1

Height

2.4mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

China

Detalji o proizvodu

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više