Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+150 °C
Length
8.1mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
8.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.6V
Height
0.9mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
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Provjerite ponovno kasnije.
KM 11,68
Each (In a Pack of 5) (bez PDV-a)
KM 13,666
Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 11,68
Each (In a Pack of 5) (bez PDV-a)
KM 13,666
Each (In a Pack of 5) (s PDV-om)
Standard
5
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
5 - 20 | KM 11,68 | KM 58,40 |
25 - 45 | KM 11,139 | KM 55,69 |
50 - 120 | KM 10,923 | KM 54,61 |
125 - 245 | KM 10,814 | KM 54,07 |
250+ | KM 10,706 | KM 53,53 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+150 °C
Length
8.1mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
8.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.6V
Height
0.9mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China