Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Series
SQ Rugged
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
92 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.04mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.02mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 1,406
Each (In a Pack of 20) (bez PDV-a)
KM 1,645
Each (In a Pack of 20) (s PDV-om)
Standard
20
KM 1,406
Each (In a Pack of 20) (bez PDV-a)
KM 1,645
Each (In a Pack of 20) (s PDV-om)
Standard
20
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
20 - 180 | KM 1,406 | KM 28,12 |
200 - 480 | KM 1,146 | KM 22,93 |
500 - 980 | KM 0,973 | KM 19,47 |
1000 - 1980 | KM 0,779 | KM 15,57 |
2000+ | KM 0,649 | KM 12,98 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Series
SQ Rugged
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
92 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.04mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.02mm
Zemlja podrijetla
China
Detalji o proizvodu