Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-23
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Common Cathode
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
800mV
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
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Provjerite ponovno kasnije.
KM 0,346
Each (Supplied on a Reel) (bez PDV-a)
KM 0,405
Each (Supplied on a Reel) (s PDV-om)
200
KM 0,346
Each (Supplied on a Reel) (bez PDV-a)
KM 0,405
Each (Supplied on a Reel) (s PDV-om)
200
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
200 - 800 | KM 0,346 | KM 69,21 |
1000 - 1800 | KM 0,26 | KM 51,91 |
2000 - 9800 | KM 0,195 | KM 38,93 |
10000+ | KM 0,173 | KM 34,61 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-23
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Common Cathode
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
800mV
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.