Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-363 (SC-88)
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Common Anode
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
6
Maximum Forward Voltage Drop
1V
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 1,017
Each (Supplied on a Reel) (bez PDV-a)
KM 1,19
Each (Supplied on a Reel) (s PDV-om)
50
KM 1,017
Each (Supplied on a Reel) (bez PDV-a)
KM 1,19
Each (Supplied on a Reel) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
50 - 550 | KM 1,017 | KM 50,83 |
600 - 1450 | KM 0,454 | KM 22,71 |
1500+ | KM 0,389 | KM 19,47 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-363 (SC-88)
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Common Anode
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
6
Maximum Forward Voltage Drop
1V
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.