Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Series
DMG2302UK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
2.8 nC @ 10 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,497
Each (In a Pack of 100) (bez PDV-a)
KM 0,582
Each (In a Pack of 100) (s PDV-om)
100
KM 0,497
Each (In a Pack of 100) (bez PDV-a)
KM 0,582
Each (In a Pack of 100) (s PDV-om)
100
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
100 - 400 | KM 0,497 | KM 49,75 |
500 - 900 | KM 0,433 | KM 43,26 |
1000 - 1900 | KM 0,389 | KM 38,93 |
2000 - 2900 | KM 0,368 | KM 36,77 |
3000+ | KM 0,346 | KM 34,61 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Series
DMG2302UK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
2.8 nC @ 10 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu