Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
11 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
6.55mm
Typical Gate Charge @ Vgs
16 nC @ 10V
Width
3.55mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Automotive Standard
AEC-Q101
Height
1.65mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,562
Each (On a Reel of 2500) (bez PDV-a)
KM 0,658
Each (On a Reel of 2500) (s PDV-om)
2500
KM 0,562
Each (On a Reel of 2500) (bez PDV-a)
KM 0,658
Each (On a Reel of 2500) (s PDV-om)
2500
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
11 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
6.55mm
Typical Gate Charge @ Vgs
16 nC @ 10V
Width
3.55mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Automotive Standard
AEC-Q101
Height
1.65mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China