Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220AB
Series
DMN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Width
9.01mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
48 nC @ 10 V
Length
10.66mm
Forward Diode Voltage
1.2V
Height
4.82mm
Minimum Operating Temperature
-55 °C
Automotive Standard
AEC-Q101
Detalji o proizvodu
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 6,272
Each (In a Tube of 50) (bez PDV-a)
KM 7,338
Each (In a Tube of 50) (s PDV-om)
50
KM 6,272
Each (In a Tube of 50) (bez PDV-a)
KM 7,338
Each (In a Tube of 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
50 - 50 | KM 6,272 | KM 313,62 |
100+ | KM 5,948 | KM 297,40 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220AB
Series
DMN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Width
9.01mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
48 nC @ 10 V
Length
10.66mm
Forward Diode Voltage
1.2V
Height
4.82mm
Minimum Operating Temperature
-55 °C
Automotive Standard
AEC-Q101
Detalji o proizvodu