Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
30 V
Package Type
DI5060
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.1mm
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Height
1.1mm
Series
DMP
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 2,466
Each (In a Pack of 10) (bez PDV-a)
KM 2,885
Each (In a Pack of 10) (s PDV-om)
10
KM 2,466
Each (In a Pack of 10) (bez PDV-a)
KM 2,885
Each (In a Pack of 10) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
10 - 90 | KM 2,466 | KM 24,66 |
100 - 490 | KM 1,514 | KM 15,14 |
500 - 990 | KM 1,428 | KM 14,28 |
1000+ | KM 1,319 | KM 13,19 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
30 V
Package Type
DI5060
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.1mm
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Height
1.1mm
Series
DMP
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu