Fuji Electric 1MBI900V-120-50 Single IGBT Module, 900 A 1200 V, 4-Pin M153, Panel Mount

RS kataloški broj:: 168-4642robna marka: Fuji ElectricProizvođački broj:: 1MBI900V-120-50
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Prikaži sve u IGBTs

Tehnička dokumentacija

Tehnički podaci

Brand

Fuji Electric

Maximum Continuous Collector Current

900 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

4.28 kW

Package Type

M153

Configuration

Single

Mounting Type

Panel Mount

Channel Type

N

Pin Count

4

Transistor Configuration

Single

Dimensions

108 x 62 x 36mm

Maximum Operating Temperature

+150 °C

Zemlja podrijetla

Japan

Detalji o proizvodu

IGBT Modules 1-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Fuji Electric 1MBI900V-120-50 Single IGBT Module, 900 A 1200 V, 4-Pin M153, Panel Mount

10

Dostupno u više komada 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

Fuji Electric 1MBI900V-120-50 Single IGBT Module, 900 A 1200 V, 4-Pin M153, Panel Mount
Informacije o stanju skladišta trenutno nisu dostupne.

10

Dostupno u više komada 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Fuji Electric

Maximum Continuous Collector Current

900 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

4.28 kW

Package Type

M153

Configuration

Single

Mounting Type

Panel Mount

Channel Type

N

Pin Count

4

Transistor Configuration

Single

Dimensions

108 x 62 x 36mm

Maximum Operating Temperature

+150 °C

Zemlja podrijetla

Japan

Detalji o proizvodu

IGBT Modules 1-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više