N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC Infineon AUIRF7316QTR
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
4.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Height
1.5mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Zemlja podrijetla
Malaysia
Detalji o proizvodu
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Provjerite ponovno kasnije.
KM 3,763
Each (On a Reel of 4000) (bez PDV-a)
KM 4,403
Each (On a Reel of 4000) (s PDV-om)
4000
KM 3,763
Each (On a Reel of 4000) (bez PDV-a)
KM 4,403
Each (On a Reel of 4000) (s PDV-om)
4000
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
4.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Height
1.5mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Zemlja podrijetla
Malaysia
Detalji o proizvodu
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda