Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Series
BSC035N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.1mm
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 8,435
Each (In a Pack of 10) (bez PDV-a)
KM 9,869
Each (In a Pack of 10) (s PDV-om)
10
KM 8,435
Each (In a Pack of 10) (bez PDV-a)
KM 9,869
Each (In a Pack of 10) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
10 - 10 | KM 8,435 | KM 84,35 |
20 - 40 | KM 7,029 | KM 70,29 |
50 - 90 | KM 6,813 | KM 68,13 |
100 - 240 | KM 6,597 | KM 65,97 |
250+ | KM 6,381 | KM 63,81 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Series
BSC035N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.1mm