N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC046N10NS3GATMA1

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Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.1mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Height

1.1mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC046N10NS3GATMA1

P.O.A.

N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC046N10NS3GATMA1
Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.1mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Height

1.1mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više