N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 Infineon BSS670S2LH6327XTSA1

RS kataloški broj:: 178-7474robna marka: InfineonProizvođački broj:: BSS670S2LH6327XTSA1
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

540 mA

Maximum Drain Source Voltage

55 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

825 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

1.7 nC @ 10 V

Width

1.3mm

Number of Elements per Chip

1

Height

1mm

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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KM 0,216

Each (On a Reel of 3000) (bez PDV-a)

KM 0,253

Each (On a Reel of 3000) (s PDV-om)

N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 Infineon BSS670S2LH6327XTSA1

3000

Dostupno u više komada 3000
3000KM 648,87
6000KM 1.297,74
9000KM 1.946,61
12000KM 2.595,48
15000KM 3.244,35
18000KM 3.893,22
21000KM 4.542,09
24000KM 5.190,96
27000KM 5.839,83
30000KM 6.488,70
33000KM 7.137,57
36000KM 7.786,44
39000KM 8.435,31
42000KM 9.084,18
45000KM 9.733,05

KM 0,216

Each (On a Reel of 3000) (bez PDV-a)

KM 0,253

Each (On a Reel of 3000) (s PDV-om)

N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 Infineon BSS670S2LH6327XTSA1
Informacije o stanju skladišta trenutno nisu dostupne.

3000

Dostupno u više komada 3000
3000KM 648,87
6000KM 1.297,74
9000KM 1.946,61
12000KM 2.595,48
15000KM 3.244,35
18000KM 3.893,22
21000KM 4.542,09
24000KM 5.190,96
27000KM 5.839,83
30000KM 6.488,70
33000KM 7.137,57
36000KM 7.786,44
39000KM 8.435,31
42000KM 9.084,18
45000KM 9.733,05

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

540 mA

Maximum Drain Source Voltage

55 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

825 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

1.7 nC @ 10 V

Width

1.3mm

Number of Elements per Chip

1

Height

1mm

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više