Tehnička dokumentacija
Tehnički podaci
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Pin Count
8
Mounting Type
Surface Mount
Maximum Drain Source Voltage
30 V
Maximum Gate Threshold Voltage
2V
Series
OptiMOS
Dimensions
120 x 65mm
Maximum Continuous Drain Current
25 A
Brand
InfineonSoftware Version
V14
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
Informacije o stanju skladišta trenutno nisu dostupne.
P.O.A.
Dual N-Channel MOSFET Transistor & Diode, 25 A, 30 V, 8-Pin PQFN 3 x 3 Infineon BSZ0910NDXTMA1
5000
P.O.A.
Dual N-Channel MOSFET Transistor & Diode, 25 A, 30 V, 8-Pin PQFN 3 x 3 Infineon BSZ0910NDXTMA1
Informacije o stanju skladišta trenutno nisu dostupne.
5000
Tehnička dokumentacija
Tehnički podaci
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Pin Count
8
Mounting Type
Surface Mount
Maximum Drain Source Voltage
30 V
Maximum Gate Threshold Voltage
2V
Series
OptiMOS
Dimensions
120 x 65mm
Maximum Continuous Drain Current
25 A
Brand
InfineonSoftware Version
V14