Infineon OptiMOS™ 3 N-Channel MOSFET, 20 A, 60 V, 8-Pin TSDSON BSZ110N06NS3GATMA1

RS kataloški broj:: 823-5724Probna marka: InfineonProizvođački broj:: BSZ110N06NS3 G
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 3

Package Type

TSDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.4mm

Number of Elements per Chip

1

Length

3.4mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

1mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

Malaysia

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

€ 4,40

€ 0,44 komadno (isporučuje se u namotaju) (bez PDV-a)

€ 5,15

€ 0,515 komadno (isporučuje se u namotaju) (s PDV-om)

Infineon OptiMOS™ 3 N-Channel MOSFET, 20 A, 60 V, 8-Pin TSDSON BSZ110N06NS3GATMA1
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10€ 4,40
20€ 8,80
30€ 13,20
40€ 17,60
50€ 22,00
60€ 26,40
70€ 30,80
80€ 35,20
90€ 39,60
100€ 44,00
110€ 48,40
120€ 52,80
130€ 57,20
140€ 61,60
150€ 66,00

€ 4,40

€ 0,44 komadno (isporučuje se u namotaju) (bez PDV-a)

€ 5,15

€ 0,515 komadno (isporučuje se u namotaju) (s PDV-om)

Infineon OptiMOS™ 3 N-Channel MOSFET, 20 A, 60 V, 8-Pin TSDSON BSZ110N06NS3GATMA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10€ 4,40
20€ 8,80
30€ 13,20
40€ 17,60
50€ 22,00
60€ 26,40
70€ 30,80
80€ 35,20
90€ 39,60
100€ 44,00
110€ 48,40
120€ 52,80
130€ 57,20
140€ 61,60
150€ 66,00

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 3

Package Type

TSDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.4mm

Number of Elements per Chip

1

Length

3.4mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

1mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

Malaysia

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više