Infineon 2Mbit SPI FRAM Memory 8-Pin DFN, FM25V20A-DG
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMemory Size
2Mbit
Organisation
256K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
5 x 6 x 0.7mm
Length
6mm
Width
5mm
Maximum Operating Supply Voltage
3.6 V
Height
0.7mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
256K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Detalji o proizvodu
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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KM 64,89
Each (bez PDV-a)
KM 75,92
Each (s PDV-om)
1
KM 64,89
Each (bez PDV-a)
KM 75,92
Each (s PDV-om)
1
Kupujte na veliko
| količina | Jedinična cijena |
|---|---|
| 1 - 9 | KM 64,89 |
| 10+ | KM 55,15 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMemory Size
2Mbit
Organisation
256K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
5 x 6 x 0.7mm
Length
6mm
Width
5mm
Maximum Operating Supply Voltage
3.6 V
Height
0.7mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
256K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Detalji o proizvodu
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda