Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
53 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
200 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1050pF
Maximum Operating Temperature
+175 °C
Energy Rating
1.13mJ
Zemlja podrijetla
China
Detalji o proizvodu
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Provjerite ponovno kasnije.
KM 4,975
Each (In a Tube of 240) (bez PDV-a)
KM 5,821
Each (In a Tube of 240) (s PDV-om)
240
KM 4,975
Each (In a Tube of 240) (bez PDV-a)
KM 5,821
Each (In a Tube of 240) (s PDV-om)
240
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
240 - 240 | KM 4,975 | KM 1.193,92 |
480 - 480 | KM 4,867 | KM 1.167,97 |
720+ | KM 4,758 | KM 1.142,01 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
53 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
200 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1050pF
Maximum Operating Temperature
+175 °C
Energy Rating
1.13mJ
Zemlja podrijetla
China
Detalji o proizvodu
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.