Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
62 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Maximum Power Dissipation
188 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1800pF
Maximum Operating Temperature
+175 °C
Energy Rating
0.88mJ
Detalji o proizvodu
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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KM 11,031
Each (In a Pack of 10) (bez PDV-a)
KM 12,906
Each (In a Pack of 10) (s PDV-om)
10
KM 11,031
Each (In a Pack of 10) (bez PDV-a)
KM 12,906
Each (In a Pack of 10) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
10 - 10 | KM 11,031 | KM 110,31 |
20 - 240 | KM 10,598 | KM 105,98 |
250+ | KM 10,274 | KM 102,74 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
62 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Maximum Power Dissipation
188 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1800pF
Maximum Operating Temperature
+175 °C
Energy Rating
0.88mJ
Detalji o proizvodu
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.