N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK Infineon IPB020NE7N3GATMA1

RS kataloški broj:: 911-0897robna marka: InfineonProizvođački broj:: IPB020NE7N3GATMA1
brand-logo
Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Width

9.45mm

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

155 nC @ 10 V

Height

4.57mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

China

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

KM 9,517

Each (On a Reel of 1000) (bez PDV-a)

KM 11,135

Each (On a Reel of 1000) (s PDV-om)

N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK Infineon IPB020NE7N3GATMA1

1000

Dostupno u više komada 1000
1000KM 9.516,76
2000KM 19.033,52
3000KM 28.550,28
4000KM 38.067,04
5000KM 47.583,80
6000KM 57.100,56
7000KM 66.617,32
8000KM 76.134,08
9000KM 85.650,84
10000KM 95.167,60
11000KM 104.684,36
12000KM 114.201,12
13000KM 123.717,88
14000KM 133.234,64
15000KM 142.751,40

KM 9,517

Each (On a Reel of 1000) (bez PDV-a)

KM 11,135

Each (On a Reel of 1000) (s PDV-om)

N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK Infineon IPB020NE7N3GATMA1
Informacije o stanju skladišta trenutno nisu dostupne.

1000

Dostupno u više komada 1000
1000KM 9.516,76
2000KM 19.033,52
3000KM 28.550,28
4000KM 38.067,04
5000KM 47.583,80
6000KM 57.100,56
7000KM 66.617,32
8000KM 76.134,08
9000KM 85.650,84
10000KM 95.167,60
11000KM 104.684,36
12000KM 114.201,12
13000KM 123.717,88
14000KM 133.234,64
15000KM 142.751,40

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Width

9.45mm

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

155 nC @ 10 V

Height

4.57mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

China

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više