N-Channel MOSFET, 17 A, 250 V, 3-Pin D2PAK Infineon IPB17N25S3100ATMA1

RS kataloški broj:: 165-5608robna marka: InfineonProizvođački broj:: IPB17N25S3100ATMA1
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Height

4.4mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

China

Detalji o proizvodu

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

KM 3,223

Each (On a Reel of 1000) (bez PDV-a)

KM 3,771

Each (On a Reel of 1000) (s PDV-om)

N-Channel MOSFET, 17 A, 250 V, 3-Pin D2PAK Infineon IPB17N25S3100ATMA1

1000

Dostupno u više komada 1000
1000KM 3.222,72
2000KM 6.229,15
3000KM 9.343,73
4000KM 12.458,30
5000KM 15.572,88
6000KM 18.687,46
7000KM 21.802,03
8000KM 24.916,61
9000KM 28.031,18
10000KM 31.145,76
11000KM 34.260,34
12000KM 37.374,91
13000KM 40.489,49
14000KM 43.604,06
15000KM 46.718,64

KM 3,223

Each (On a Reel of 1000) (bez PDV-a)

KM 3,771

Each (On a Reel of 1000) (s PDV-om)

N-Channel MOSFET, 17 A, 250 V, 3-Pin D2PAK Infineon IPB17N25S3100ATMA1
Informacije o stanju skladišta trenutno nisu dostupne.

1000

Dostupno u više komada 1000
1000KM 3.222,72
2000KM 6.229,15
3000KM 9.343,73
4000KM 12.458,30
5000KM 15.572,88
6000KM 18.687,46
7000KM 21.802,03
8000KM 24.916,61
9000KM 28.031,18
10000KM 31.145,76
11000KM 34.260,34
12000KM 37.374,91
13000KM 40.489,49
14000KM 43.604,06
15000KM 46.718,64

Kupujte na veliko

količinaJedinična cijenaPo kolut
1000 - 1000KM 3,223KM 3.222,72
2000+KM 3,115KM 3.114,58

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PRIDRUŽITE SE BESPLATNO

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design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Height

4.4mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

China

Detalji o proizvodu

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više