N-Channel MOSFET, 23.8 A, 650 V, 3-Pin D2PAK Infineon IPB60R160P6ATMA1

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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

23.8 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

176 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.57mm

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

9.45mm

Series

CoolMOS P6

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Detalji o proizvodu

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

KM 10,814

Each (In a Pack of 2) (bez PDV-a)

KM 12,652

Each (In a Pack of 2) (s PDV-om)

N-Channel MOSFET, 23.8 A, 650 V, 3-Pin D2PAK Infineon IPB60R160P6ATMA1
Odaberite vrstu pakovanja

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

2

Dostupno u više komada 2
2KM 21,63
4KM 43,26
6KM 64,89
8KM 86,52
10KM 93,00
12KM 111,61
14KM 130,21
16KM 148,81
18KM 167,41
20KM 186,01
22KM 204,61
24KM 223,21
26KM 241,81
28KM 260,41
30KM 279,01

KM 10,814

Each (In a Pack of 2) (bez PDV-a)

KM 12,652

Each (In a Pack of 2) (s PDV-om)

N-Channel MOSFET, 23.8 A, 650 V, 3-Pin D2PAK Infineon IPB60R160P6ATMA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

2

Dostupno u više komada 2
2KM 21,63
4KM 43,26
6KM 64,89
8KM 86,52
10KM 93,00
12KM 111,61
14KM 130,21
16KM 148,81
18KM 167,41
20KM 186,01
22KM 204,61
24KM 223,21
26KM 241,81
28KM 260,41
30KM 279,01

Kupujte na veliko

količinaJedinična cijenaPo pakovanje
2 - 8KM 10,814KM 21,63
10 - 98KM 9,30KM 18,60
100 - 498KM 8,327KM 16,65
500 - 998KM 7,354KM 14,71
1000+KM 7,138KM 14,28

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PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

23.8 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

176 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.57mm

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

9.45mm

Series

CoolMOS P6

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Detalji o proizvodu

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više