N-Channel MOSFET, 23.8 A, 650 V, 3-Pin D2PAK Infineon IPB60R160P6ATMA1

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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

23.8 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ P6

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

176 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.31mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Width

4.57mm

Number of Elements per Chip

1

Height

9.45mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Detalji o proizvodu

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

KM 9,65

KM 4,823 Each (In a Pack of 2) (bez PDV-a)

KM 11,29

KM 5,643 Each (In a Pack of 2) (s PDV-om)

N-Channel MOSFET, 23.8 A, 650 V, 3-Pin D2PAK Infineon IPB60R160P6ATMA1
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

2

Dostupno u više komada 2
2KM 9,65
4KM 19,29
6KM 28,94
8KM 38,59
10KM 48,23
12KM 57,88
14KM 67,53
16KM 77,17
18KM 86,82
20KM 96,47
22KM 106,11
24KM 115,76
26KM 125,40
28KM 135,05
30KM 144,70

KM 9,65

KM 4,823 Each (In a Pack of 2) (bez PDV-a)

KM 11,29

KM 5,643 Each (In a Pack of 2) (s PDV-om)

N-Channel MOSFET, 23.8 A, 650 V, 3-Pin D2PAK Infineon IPB60R160P6ATMA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

2

Dostupno u više komada 2
2KM 9,65
4KM 19,29
6KM 28,94
8KM 38,59
10KM 48,23
12KM 57,88
14KM 67,53
16KM 77,17
18KM 86,82
20KM 96,47
22KM 106,11
24KM 115,76
26KM 125,40
28KM 135,05
30KM 144,70

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

23.8 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ P6

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

176 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.31mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Width

4.57mm

Number of Elements per Chip

1

Height

9.45mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Detalji o proizvodu

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više