Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
250 V
Series
IPD600N25N3 G
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 7,462
Each (In a Pack of 10) (bez PDV-a)
KM 8,731
Each (In a Pack of 10) (s PDV-om)
10
KM 7,462
Each (In a Pack of 10) (bez PDV-a)
KM 8,731
Each (In a Pack of 10) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
10 - 10 | KM 7,462 | KM 74,62 |
20 - 40 | KM 6,164 | KM 61,64 |
50 - 90 | KM 6,056 | KM 60,56 |
100 - 240 | KM 5,84 | KM 58,40 |
250+ | KM 5,624 | KM 56,24 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
250 V
Series
IPD600N25N3 G
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V